| PART |
Description |
Maker |
| SGU2N60UFD |
Ultra-Fast IGBT 2.4 A, 600 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| SUU10P06-280L-E3 |
10 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 TO-251, 3 PIN
|
Vishay Intertechnology, Inc.
|
| 1MBI400NB-120 |
IGBT module 400 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| GT10G101 |
10 A, 400 V, N-CHANNEL IGBT
|
|
| STD5N20 3093 |
N - CHANNEL 200V - 0.7W - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7ohm - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.7 - 5A - TO-251/TO-252 POWER MOS TRANSISTOR
From old datasheet system
|
SGS Thomson Microelectronics
STMicroelectronics
|
| CM400DY-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 400 A, 3300 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM400DY-50H |
HIGH POWER SWITCHING USE INSULATED TYPE
400 A, 2500 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| SW2N60 SWD2N60 |
N-channel MOSFET (TO-251 , TO-252)
|
Xian Semipower Electronic Technology Co., Ltd.
|
